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Found 1257 results for any of the keywords substrate and. Time 0.010 seconds.
Wafer Supplier of Compound Semiconductor Materials and Epi ServiceGanwafer, as a semiconductor wafer supplier, offers semiconductor substrate and epitaxial wafers of SiC, GaN, III-V group compound and etc.
Single Sided Flexible Printed Circuits | 1 Layer Flex Circuit | singleA single-sided flexible printed circuit is a flex circuit with one layer of copper trace on one Polyimide substrate and with one layer of Polyimide coverlay laminated to copper trace so that only one side of copper will
A New Era of Exterior Sealants | osi | CE CenterSponsored by OSI | By Andrew A. Hunt
GaN on GaN Homoepitaxial Growth with Low Dislocation DensityGaN on GaN technology is grown GaN epi layers on homogeneous substrate, is an effective way to reduce dislocation density.
Steel Plate,Section Steel,Steel Rebar,Steel Sheet Manufacturer and SupWe are manufacturer of Steel Plate in China, if you want to buy Section Steel, Steel Rebar, Steel Sheet, please contact us. We sincerely hope to establish business relationships and cooperate with you.
Semiconductor wafer,Single Crystal wafer,wafer substrate-XIAMEN POWERWPAM-XIAMEN produce wide range of Compound Semiconductor Wafer and LED wafer substrate - single crystal wafer: Silicon Carbide Wafer(Substrate), Gallium Nitride Wafer(Substrate), Gallium Nitride HEMT,GaAs Wafer(Substrate)
Compound Semiconductor Materials: SiC, GaN, III-V Group MaterialCompound semiconductor materials including III-V wafers, SiC, GaN and other semiconductor wafers are offered with low defect density
AlGaN / GaN on Silicon HEMT Wafer with High 2DEG MobilityGaN on silicon substrate wafer is offered with HEMT or template structure used in D-mode / E-mode power or RF application.
Freestanding GaN (Gallium Nitride) Substrate Grown by HVPEFree-standing GaN substrate wafer with low dislocation density, uniform surface and low defect density is for UHB-LED and LD.
Epi-ready Semi-Insulating Freestanding GaN (Gallium Nitride) SubstrateSemi-insulating Freestanding GaN (Gallium Nitride) Substrate grown by HVPE is less or free macro defect density for RF device.
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